LK-FCAMPD Amplified RF InGaAs Photodetector
- ويڪر بينڊوڊٿ
- Incorporated Bias-T
- O/E Hybrid Integrated
- High Gain, Low Noise, Broadband
- ايس ايم اي ڪنيڪٽر
- Low Dark Current, High signal-to-noise ratio
- Small Form Factor.
پيداوار وضاحت
LK-FCAMPD is a fusion of optical and electronic technology, integrating a broadband InGaAs photodiode with a low-noise amplifier. This device is sensitive to wavelengths between 1000 and 1650nm, thanks to its InGaAs PIN photodiode, and the low-noise amplifier provides an RF gain ranging from 20 to 30dB.
LK-FCAMPD offers configurable bandwidth options, including 1 gigahertz, 2.5 gigahertz, and customizable bandwidths up to a maximum of 5 gigahertz. The device operates on a +5-volt power supply and features a standard FC (face-contacted) fiber-optic connector for optical input. The RF output is facilitated through an SMA-compatible connector, which is impedance-matched to 50 ohms.
LK-FCAMPD is lightweight, with a mass of less than 25 grams, making it suitable for various portable and compact applications. It is certified to comply with the Restriction of Hazardous Substances (RoHS) Directive 2.0, indicating its commitment to environmental and safety standards.
ٽيڪنيڪل Specifications
| Typical & Absolute Maximum Rating | ||||
|---|---|---|---|---|
| سميجي | Sym. | قسم | درجه بندي | يونٽ |
| اسٽوريج جي درجه بندي جي حد | Tايس ٽي | -45 ~ +85 | -55 ~ +100 | ℃ |
| Operating case temperature range | TC | 25 | -40 ~ +70 | ℃ |
| تعصب وولٹیج | VR | +5 | +4.75 ~ +5.25 | V |
| Optical Input Power | پن | 0 | +5 | ڊي بي ايم |
| Burn-out Optical Power | PB | - | 13 + | ڊي بي ايم |
| Lead soldering temperature | Tp | 280 (10s) | 330 (10s) | ℃ |
| Electrical / Optical Characteristics ( TC = 22 ± 3 ℃ ) | |||||||
|---|---|---|---|---|---|---|---|
| سميجي | سم | ٽيسٽ حالت | پيرا ميٽر ويليوز | يونٽ | |||
| موج جي حد | λ | - | 1000 ~ 1650 | nm | |||
| Frequency Range | - | - | L - Band | S - Band | CM | - | |
| Small Signal Bandwidth | f-3dB | TC = 22 ± 3℃ | 0.03 ~ 1 | 0.03 ~ 2.5 | 0.1 ~ 5 | GHz | |
| ذميواري | Re | VR =+5V, Pin = 1 ميگاواٽ | λ = 1310 nm | 0.85 | 0.90 | 0.90 | اي / ڊبليو |
| λ = 1550 nm | 0.90 | 0.90 | 0.90 | ||||
| RF Signal Gain | G | - | 30 2 | 20 2 | 20 2 | dB | |
| طول و عرض فليٽنس | A | TC =-40~+70 ℃ | ≤ ± 1.5 | ≤ ± 1.5 | ≤ ± 2 | dB | |
| اوٽ VSWR | VSWR | - | ≤ 2 | ≤ 2 | ≤ ± 2.2 | - | |
| Saturation Optical Power | Ps | VR = +5 V, λ = 1550 nm AC Modulated |
+5 | ڊي بي ايم | |||
| Saturation RF Output Power | Pٻاهر | - | 15 | ڊي بي ايم | |||
| اونداهي ڪرنٽ | ID | - | ≤10 | nA | |||
| ٻاھران بيڪڻ | RL | - | 50 | Ω | |||
● Typical Response Curves

( Fig . 1 L- Band FCAMPD InGaAs Photodetector Frequency Response)

( Fig . 2 S- Band FCAMPD InGaAs Photodetector Frequency Response)

( Fig . 3 C- Band FCAMPD InGaAs Photodetector Frequency Response)
● Dimension and Pins ( Unit: mm[inch] )

Optical Connector:FC(face-contacted) fiber-optic connector
RF Connector:SMA

● آرڊر جي معلومات
شيٽ 1:
| ڪوڊ | اينالاگ بينڊوڊٿ |
| L | 0.03 ~ 1 GHz |
| S | 0.03 ~ 2.5 GHz |
| CM | Customization ( ≦ 5GHz ) |
● احتياطي تدبيرون
Be sure the fiber coupling facet is clean before connecting it to opto-circuit .
RF interface and optical interface shall be covered with dust cap when not in use.
The suitable ESD protection is required in storage, transportation and using .

All of our standard photodetectors can be customized into modules!
اپليڪشن
Radar Information Processing
اليڪٽرانڪ جنگ
Antenna Measurement
Fiber Optic Communications
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